ZnO films prepared at different temperatures and annealed at 900°C in oxygen are studied by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is observed that in the PL of the as-grown films the green luminescence (GL) and the yellow luminescence (YL) are related, and after annealing the GL is restrained and the YL is enhanced. The O 1 s XPS results also show the coexistence of oxygen vacancy ( V O ) and interstitial oxygen (O i ) before annealing and the quenching of the V O after annealing. By combining the two results it is deduced that the GL and YL are related to the V O and O i defects, respectively.
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Yang et al. (2007) studied this question.
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