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Strong continuous-wave photoluminescence from midinfrared lead–salt PbSrSe/PbSe multiple quantum wells grown on (111) BaF2 substrates by molecular-beam epitaxy was observed at temperatures from 100 to 300 K. The maximum output power was 2.9 and 0.6 mW at room temperature with episide down and episide up mounting, respectively. At 225 K, the temperature difference between the active region and the heat sink was about 32 °C for episide down mounting and 75 °C for episide up mounting. The peak energies shifted toward high energy with increasing temperature. The temperature-tuning coefficient obtained from episide down and episide up mounting was 0.45 and 0.50 meV/K.
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Zhao et al. (2004) studied this question.
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