Chemical Shifts of Acceptor Binding Energies and g Factors in Si and Ge

Chemical shifts of impurity binding energies and g factors are explored within the framework of a modified effective-mass or wave-packet formalism. Magnitudes of the shifts are determined from band-defect energies, a crystallographic generalization of the quantum-defect method for spherical potentials. Good agreement with experiment is obtained for group-III acceptors in Si and Ge.