Grain Growth Studies in Polysilicon by AR40 Ion Implantation and Thermal Annealing

We have used the technique of multiple ion implantations of Ar 40 in polycrystalline silicon films for amorphization and subsequent thermal annealing for recrystallization. We observe dendritic grain growth with grain sizes (≃ 0.75 μm) about ten times larger than in original polycrystalline silicon films. This ion implantation technique can be used to form a device quality polysilicon film with large grains on an amorphous substrate.