The Photoacoustic (PA) spectra in several layered compounds such as HfSe 2 , ZrS 2 , HfS 2 , WSe 2 , MoSe 2 and MoS 2 have been measured at energies above the fundamental absorption edge. In this optical region the PA signal is regarded to be independent of the optical absorption coefficient and the dips in the PA spectra may be ascribed to optical reflection effects inherent the band structure. Generally, our experimental data prove that the information on the band structure of the layered semiconductors is in good agreement with that obtainable by means of conventional spectroscopic techniques, and moreover it is comparable with the data which are usually obtained by means of modulatory spectroscopy.
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Baldassarre et al. (1988) studied this question.
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