Calculations of the effect of bulk traps on the time dependence of the channel current in accumulation‐type MISFET's are reported. It is shown that a uniform density of deep acceptors in the bulk material gives rise to a decay in the channel current, which decays approximately linearly as a function of the logarithm of time. If capture of the electrons is assumed to occur by a nonradiative multiphonon emission process, then the temperature dependence that is obtained agrees with experimental results.
No takes yet. Share an insight, caveat, or question.
L. G. Meiners (1986) studied this question.