101-Stage 2 µm gate ring oscillators in laser-grown silicon islands embedded in SiO2

E/D MOS test transistors and 101-stage 2 µm gate E/D MOS ring oscillators were fabricated in laser-grown single- and multicrystal islands embedded in oxide substrates. Most transistors showed goodI-Vcharacteristics, short-channel effects, and kink effects. Ring oscillators had a switching delay per stage (τPd) of 0.4 ns and a power-delay product (τPd Pd) of 2.5 PJ at a supply voltage (VDD) of 10-15 V. It was noted that different crystal orientations of the islands posed no difficulty in processing and VTcontrol when applied to short channel devices, and that enhanced boundary diffusion results in occasional malfunctional transistors and erroneous high surface electron mobilities (µse).