Emission characteristics, spectral properties, and quantum efficiencies of AlxIn1−xSb light-emitting diodes, with aluminum compositions between 0% and 8.75%, have been investigated as a function of temperature from 25 to 300 K, and a function of current from 1 to 100 mA. As both current and temperature are varied a change in the dominant recombination mechanism is observed as indicated by changes in the measured emission. An analysis of the light-current characteristics shows that Auger processes become important in all devices at temperatures above 100 K, implying an activation energy of approximately 7–13 meV depending on the aluminum composition.
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Mirza et al. (2008) studied this question.
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