In situ measurement of AlAs and GaAs refractive index dispersion at epitaxial growth temperature

In situ molecular beam epitaxy control of III–V optoelectronic device growth has been achieved by dynamic optical reflectometry with tunable excitation wavelength, through the use of a titanium:sapphire laser light source. This new multiwavelength reflectometry method was used to determine the values of the AlAs and GaAs refractive indices at growth temperature (600 °C). Index dispersion between 760 and 960 nm is presented and found to be in good agreement with the existing models.