560-nm-continuous wave laser emission from ZnSe-based laser diodes on GaAs

Room-temperature continuous wave (cw)-lasing emission at wavelengths around 560 nm was obtained from ZnSe-based laser diodes grown on GaAs substrates. The wavelengths of the devices are most suitable as lightsources for plastic optical fibers. To achieve this emission wavelength, CdZnSSe quantum wells with high Cd content were employed as active region. The growth of such quantum wells requires Se-rich growth conditions.