The reaction and/or diffusion in the Ti metallizing Al/Ti/n-InP contacts and their correlation with electrical properties have been studied. In the as-deposited Al/Ti/InP contact, interaction between Ti and P and outdiffusion of In into the Ti layer were observed in the initial stage of the reaction process. The reaction between Ti and P resulting in Ti-P compounds and the segregation of decomposed In proceeded during rapid thermal annealing (RTA) treatment, and a stable contact configuration of Al/Ti/In/Ti-P/InP was obtained after RTA treatment at 600°C for 20 s. An extremely low Schottky barrier height of 0.14 eV was obtained for the as-deposited contact. An ohmic I–V characteristic of the contact without Schottky barrier is demonstrated after RTA treatment. The formation of stable Ti-P compounds seems to be related to the ohmic behavior of the contacts.
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Takeyama et al. (1999) studied this question.
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