Fabrication and characterization of a Pb5Ge3O11 one-transistor-memory device

A Pb5Ge3O11 metal–ferroelectric–metal–oxide–silicon memory transistor has been fabricated. The device showed a memory window of about 2 V. The memory window was almost saturated at the operation voltage of 2 V. The “off” state drain current (ID) at VD of 0.1 V and VG of 0.5 V is about 1×10−8 A. The “on” state drain current (ID) at VD of 0.1 V and VG of 0.5 V is about 1×10−6 A, which is 100 times high than that of off state.