Copper-phthalocyanine field-effect transistor with a low driving voltage

Copper-phthalocyanine-thin-film metal-insulator-semiconductor field-effect transistors operating with a low driving voltage have been fabricated by using a PbZr0.5Ti0.5O3 film as a high-permittivity insulator layer (ε≈500). A field mobility of about 0.017cm2∕Vs and an ON/OFF ratio of more than 103 were obtained at a gate voltage of −2V and a drain-source voltage of −1V. This p-type copper-phthalocyanine transistor has a driving voltage low enough for practical device applications.