Rice seedlings under cadmium stress: effect of silicon on growth, cadmium uptake, oxidative stress, antioxidant capacity and root and leaf structures

In this study, the effect of silicon (Si) addition on cadmium (Cd) toxicity in rice seedlings was investigated. After a series of screening experiments, 50 μmol·L−1 of Cd and 10 μ mol·L−1 of Si were selected. Treatment of rice seedlings with Cd (50 μ mol·L−1) resulted in significant accumulation of this metal in roots and shoots. The data revealed that accumulation of Cd resulted in oxidative stress in rice seedlings as evidenced by increased accumulation of hydrogen peroxide (H2O2) and malondialdehyde (MDA; a peroxidation product of lipids). However, addition of Si (10 μ mol·L−1) together with Cd prevented accumulation of Cd, H2O2 and MDA. Antioxidant capacity was decreased by Cd but enhanced by Si addition. Cd decreased the length and frequency of root hairs, stomatal frequency, and distorted leaf mesophyll cells and vascular bundles. However, addition of Si together with Cd reduced these abnormalities. The results showed that addition of exogenous Si protected rice seedlings against Cd toxicity by preventing Cd accumulation and oxidative stress (H2O2 and MDA accumulation) by increasing Si accumulation and antioxidant capacity, which maintained the structure and integrity of leaf and root.