Characterization of a series of correlated electron-spin resonance (ESR) and photoluminescence (PL) lines in diamond grown by chemical vapor deposition is reported. The series consists of a set of structured PL bands in the range 1.8--2.3 eV, and ESR lines due to an $S=1$ center with $g=2.0039(1)$ and D=35.8(1) mT at 300 K. PL lines are shown to originate from a defect center with the ground state at 2.24 eV below the conduction band, and with several excited states. The whole set of data can be interpreted in terms of a defect containing a neutral interstitial Ni atom at the center of a divacancy.
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Iakoubovskii et al. (2000) studied this question.
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