We report a technique for nanofabrication in the InAs/GaSb/AlSb 6.1 Å material system that utilizes the large difference in the surface Fermi level pinning position for InAs [Efs(InAs)] compared with that for AlSb. An InAs/AlSb single quantum well is capped with a 3 nm, intentionally p-doped InAs layer. As a result of its construction and a relatively low Efs(InAs) there are no free carriers in the InAs/AlSb single quantum well making the quantum well insulating as-grown. Simply by selectively removing the thin p-doped InAs cap layer with a wet etch, the surface Fermi level becomes pinned on AlSb and shifted upward by half an electron volt. This results in a drastic change in band bending and creates a conducting electron channel in the buried InAs quantum well. We demonstrate with experiment and the support of a self-consistent band bending calculation that this scheme is highly effective for nanofabrication.
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Yang et al. (2002) studied this question.
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