We mechanically clean graphene devices using an atomic force microscope (AFM). By scanning an AFM tip in contact mode in a broom-like way over the sample, resist residues are pushed away from the desired area. We obtain atomically flat graphene with a root mean square (rms) roughness as low as 0.12 nm after this procedure. The cleaning also results in a shift of the charge-neutrality point toward zero gate voltage, as well as an increase in charge carrier mobility.
No takes yet. Share an insight, caveat, or question.
Lindvall et al. (2012) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: