A resist-less nanofabrication method, based on focused ion beam lithography, for connecting and tailoring a nanometer-scale planar device in ultrathin graphitic disks is demonstrated by producing 50-nm-wide double side-gated transistor devices (see image). Experiments and theory suggest that the behavior of the nanoribbons can be interpreted as a Coulomb blockade in a linear array of tunnel junctions between graphene islands.
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