We have calculated both T1 and T2 for (110)-oriented GaAs/AlGaAs quantum wells near room temperature. The altered symmetry of (110)-oriented quantum wells leads to an increase in calculated spin coherence times (T1) compared to those of similar (100)-oriented quantum wells, exceeding 1 ns at room temperature. We have also studied the electron spin coherence times as a function of applied electric field in (100)- and (110)-oriented GaAs/AlGaAs quantum wells. T1 is considerably more responsive to the growth-direction electric field in (110)-oriented quantum wells than in (100)-oriented quantum wells, whereas the response of T2 is similar for both growth directions.
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Lau et al. (2002) studied this question.
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