The photorefractive effect combined with standard Hall measurements is used to determine photoionization and recombination cross sections and deep-level number densities in a crystal of iron-doped InP. The results are well fit by iron densities [Fe2+]=6×1016 cm−3 and [Fe3+]=2.5×1015 cm−3, photoionization cross sections at 1.06 μm, se= 4×10−18 cm2, and sh= 3.1×10−16 cm2, and recombination cross sections σe= 10−14 cm2 and σh= 3×10−16 cm2. The sign of the photorefractive beam coupling gain implies that holes dominate this process even though the dark conductivity and photoconductivity are dominated by electrons.
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Valley et al. (1988) studied this question.
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