Changes in current by Cl2 gas adsorption were measured at 200 °C for SnO2 films sputtered on SiO2/Si substrates, with a varying electric field from the substrate. Properties of Cl2 adsorption, such as sensitivity and reaction rate constant, under a positive (+5 V) substrate bias were almost the same with those under 0 V bias. However, under a negative (−5 V) substrate bias, the current decreased remarkably by Cl2 adsorption and a high sensitivity was obtained. Moreover, the reaction rate constant was found to be about 10 times or more larger than those under 0 V and +5 V with positive biases. It was indicated that an external electric field affects the adsorption behavior of Cl2 on SnO2 surface.
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Kunishima et al. (1996) studied this question.