We have used hot electrons emitted into vacuum from biased metal-oxide-semiconductor (MOS) structures to form a direct image of the spatial emission distribution. Hot-electron emission microscopy allows us to investigate the emission characteristics of biased MOS structures and its correlation with morphology, as well as time-dependent prebreakdown phenomena at high spatial resolution ( ~20 nm). We show that different oxide structures have very different emission, as well as prebreakdown characteristics.
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Maňkoš et al. (1996) studied this question.
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