We have studied the nitrogen composition dependence of the characteristics of TaN/HfLaON/Hf1 - x - yNₓOy/SiO₂/SiMONOS memory devices. By increasing the N composition in theHf1 - x - yNₓOytrapping layer, both the memory window and high-temperature retention improved. TheHf0.3N0.2 O0.5MONOS device displayed good characteristics in terms of its±9-V program/erase (P/E) voltage, 100-P/E speed, large initial 2.8-V memory window, and a ten-year extrapolated retention of 1.8 V at 85∘Cor 1.5 V at 125∘C.
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Yang et al. (2008) studied this question.
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