A novel heteroepitaxial structure is formed between the metallic hard material hafnium diboride and a hafnium single-crystal substrate. The film is formed by chemical vapor deposition of boron at 750 °C using diborane gas and is characterized with X-ray photoelectron spectroscopy, low-energy electron diffraction, and X-ray diffraction.
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Belyansky et al. (1997) studied this question.
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