Chemical state changes and desorption properties of S atoms in (NH4)2S x -treated GaAs(001) and InP(001) surfaces are studied using soft X-ray photoelectron spectroscopy (SXPES) and thermal desorption spectroscopy (TDS). It was revealed by SXPES that (NH4)2S x -treated and deionized-water-rinsed GaAs(001) and InP(001) surfaces, after annealing at 400° C, are completely terminated by S-Ga and In-S bonds, respectively. Desorption peaks of S atoms are observed at 560° C for S/GaAs(001) and 460° C for S/InP(001) in TDS spectra. Desorption of V-elements, such as As and P atoms, is hindered by the S passivation.
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Sugiyama et al. (1995) studied this question.
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