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The formation of discrete phase GaP by diffusion of phosphorus into GaAs at pressures of 10 to 30 atm and temperatures of 800° to 900°C is described. X-ray data identifying GaP are given. A mechanism is postulated for the step-like concentration gradients observed. Striae supporting this hypothesis were observed and are illustrated. Epitaxial growth as a factor is considered but not believed a significant factor based on microscopy and experimental environment.
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L. E. Stone (1962) studied this question.
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