High-performance carbon nanotube transistors on SrTiO3/Si substrates

Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-κ dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 μS/μm. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube–electrode interface due to the high-κ SrTiO3 decreases or eliminates the nanotube-electrode Schottky barrier.