A comprehensive study was made of radiation effects in the component devices that comprise a particular technology developed by Texas Instruments for GaAs MMICs. Total dose, transient, and neutron radiation effects were measured in FETs. Transient effects were measured in capacitors, resistors, Schottky barrier diodes and the MWICs. Results are compared with predictions of radiation effects models.
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Anderson et al. (1985) studied this question.
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