Determination of GaAs m.e.s.f.e.t. equivalent-circuit parameters from I/V and 1 MHz measurements

A measurement technique is described for determining the equivalent-circuit parameters of microwave GaAs m.e.s.f.e.t.s from d.c, 1 MHz capacitance and 1 MHz voltage-gain measurements. The equivalent-circuit parameters of a commercially available 1 μm-gate-length GaAs m.e.s.f.e.t. determined with this technique are compared with parameters derived from scattering-parameter measurements made at 2 to 4 GHz.