Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO∕ZnMgO multiple quantum wells

The authors investigate the effect of oxygen implantation and rapid thermal annealing in ZnO∕ZnMgO multiple quantum wells using photoluminescence. A blueshift in the photoluminescence is observed in the implanted samples. For a low implantation dose, a significant increase of activation energy and a slight increase of the photoluminescence efficiency are observed. This is attributed to the suppression of the point defect complexes and transformation between defect structures by implantation and subsequent rapid thermal annealing. A high dose of implantation leads to lattice damage and agglomeration of defects leading to large defect clusters, which result to an increase in nonradiative recombination.