The carrier removal rates and the minority carrier diffusion length changes due to 1-MeV electron irradiation have been measured for n- and p-type GaAs single crystals. Initial carrier concentration and conductivity-type effects on the electrical properties in the irradiated GaAs are clarified. These results can be well explained by taking into account the electron irradiation-induced electron and hole traps identified in previous work.
No takes yet. Share an insight, caveat, or question.
Yamaguchi et al. (1985) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: