We demonstrate the fabrication of vertical germanium nanowire (Ge NW) molecular sensor arrays that are suitable for biological field-effect-transistor sensing, using conventional semiconductor fabrication processes. The proposed fabrication process enabled production of freestanding vertical NW arrays with a Schottky junction top contact. The arrays' dc current–voltage characteristics could be modulated by altering the solution pH in contact with the gate insulator-coated nanowire surface. A sensitivity of with sensor area is demonstrated for undoped vertical Ge NW arrays.
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Koto et al. (2008) studied this question.
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