Using junction-capacitance methods, we study the thermal charge emission of holes trapped in the dangling-bond defect D of p-type a-Si:H. Over a significant temperature range, we find a linear temperature-independent relation between emission time and the residence time of the hole on the D defect. We attribute this characteristic to a structural-relaxation process that is slow in disordered materials.
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Carlen et al. (1995) studied this question.
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