Very-high-efficiency large-area SOG-cast silicon cells with over 14% efficiency were fabricated and analyzed in order to identify efficiency loss mechanisms. A number of small-area mini-cells were fabricated from the 10×10 cm2 cell, and their illuminated and dark J-V characteristics were investigated as a function of position, including the grain boundaries. The effect of the grain boundary on the J-V characteristics was quantitatively determined using the mini-cell technique. Also, a possibility of obtaining large-area SOG silicon cells with over 16% efficiency was indicated after the investigation of the spatial homogeneity.
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Shimokawa et al. (1987) studied this question.
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