It has been clarified that p-i-n type a-Si:H solar cells fabricated on large-grain SnO2on glass (milky tin oxide on glass (MTG)) substrates with thin (∼ 0.2-µm) undoped (i-) layers have comparable high conversion efficiencies (η > 7 percent) and higher stability against the prolonged illumination of intense light when compared with thicker (∼ 0.5m-µm) i-layer cells with conventional transparent conductive oxide. The observed high stability was explained qualitatively by the dependence of the recombination rate of photogenerated (PG) carriers in undoped a-Si:H on the i-layer thickness.
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Iida et al. (1984) studied this question.