Intrinsic carrier concentrations in Hg1−xCdxTe with the use of Fermi–Dirac statistics

The intrinsic carrier concentrations in Hg1−xCdxTe are calculated with the use of the Fermi–Dirac statistics thus expanding on our previous calculation which employed the Boltzmann statistics. The use of Boltzmann statistics for Hg1−xCdxTe is limited to x≥0.20 and is not appropriate for the narrow band gap x<0.20 compositions. Our present treatment improves on existing calculations by using composition and temperature dependent momentum matrix element squared, which is the input to the Kane’s k ⋅ p theory, and by making no approximations to the band structure beyond those inherent to Kane’s theory. We find that our results for x≥0.20 using both statistics are in excellent agreement. We also compare our results with those of Hansen and Schmit. Good agreement is found for the range of 0.15≤x≤0.40.