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A Si hetero bipolar transistor (Si HBT) with a low resistivity amorphous silicon carbide (SiC x ) emitter is studied. The emitter is formed by means of a capacitive coupling plasma chemical vapor deposition (PCVD) system. The HBT current gain is compared with that of a polysilicon-emitter transistor. A higher current gain is observed, although the carrier concentration of the SiC x emitter is one order less than that of the polysilicon emitter. The effect of posthydrogenation treatment in improving current gain is also described.
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Kuwagaki et al. (1989) studied this question.
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