Specific contact resistance of the porous silicon and silver metal Ohmic contact structure

We report the experimental result of the specific contact resistance (ρ c ) of porous silicon and silver metal Ohmic contact structure formed on the n + region (doped with phosphorous atoms) to boron-doped p-type single crystalline silicon. The contact structure consists of sintered Ag metal grid contact on a porous silicon surface, which was formed on the n + region by an electrochemical etching process. The electrical properties of the Ohmic contact thus formed are estimated by measuring the specific contact resistance at the interface of the porous silicon/silver Ohmic contact structure as a function of surface doping concentration. The measured value of ρ c as a function of the surface doping shows that ρ c is a strong function of surface doping, and decreases with increasing doping. The measured data provide reliable values of ρ c for the silver metal/porous silicon/p-type c-Si structure, which enable us to study the electrical properties of the porous silicon/silver Ohmic contact.