Quantum wells (QWs) and light emitting diode (LED) structure of triangular form were grown using InGaN–GaN by metalorganic chemical vapour deposition. Quantum dot size is in a range of 2 to 50 nm and the dots exhibit very uniform spatial distribution compared to those in the rectangular distribution. Both photoluminescence and electroluminescence show higher emission and smaller full-width at half maximum in QWs and LED structures with triangular QWs than those with rectangular QWs.
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Choi et al. (2002) studied this question.
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