Particle Generation and Film Formation in an Atmospheric-Pressure Chemical Vapor Deposition Reactor Using the Tetraethylorthosilicate (TEOS)/He, TEOS/O2/He, and TEOS/O3/He Systems

Film formation on a substrate and particle generation in the gas phase were examined simultaneously in an atmospheric-pressure chemical vapor deposition (CVD) reactor using tetraethylorthosilicate(TEOS)/O3/He, TEOS/O2/He and TEOS/He systems. Particle generation in these systems began at furnace temperatures T f of 60, 340 and 740°C, respectively. Film formation began at T f=100, 600 and 700°C, respectively. For the TEOS/O3/He system, an exponential reduction in the film growth rate for T f≥300°C was found to be induced by a decrease in the ozone concentration due to thermal decomposition.