Thermal decomposition of silane highly diluted in argon was studied behind incident shock waves at the temperatures ranging from 1250 to 1600 K. The decomposition course was followed by monitoring the infrared emission of silane at 4.4 μm. It was confirmed that the effects of consecutive reactions on the decay rate of silane were negligible under our experimental conditions. The unimolecular rate constants obtained directly from the decay curve of silane were found to be smaller than previous experimental values but consistent with the result of the recent trajectory-RRK calculation. It was also found that the addition of molecular hydrogen or nitrogen monoxide to the reactant mixtures had no effect on the decomposition rate of silane.
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Tanaka et al. (1987) studied this question.
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