Successful growth of a cubic In0.17Ga0.83N/GaN structure exhibiting blue luminescence at temperatures up to 500 K is reported. Atomic force microscopy and x-ray diffraction are used to analyze the morphological and crystalline properties of the sample. Photoluminescence measurements reveal broad, but well defined emission with a maximum at 440–450 nm in the temperature range of 5–500 K. A line-shape analysis of the spectra, as well as measurements of the absorption coefficient, allow an estimation of the band-gap energy of the cubic In0.17Ga0.83N epilayer.
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Müllhäuser et al. (1997) studied this question.
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