Using the evanescent-wave ellipsometry technique, we have observed the growth of a disordered liquid-crystal layer adjacent to a SiOₓ-coated surface near the nematic-isotropic transition. We have also observed the pretransitional growth of a planar-oriented liquid-crystal layer in the isotropic phase of the same system, with a negative orientational order parameter. Both behaviors can be explained quantitatively by the Landau--de Gennes theory.
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Moses et al. (1991) studied this question.
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