Tc vs R_ dependence in thin Mo films and Mo/Si multilayers is simultaneously of three-dimensional (3D) and 2D nature: the main effect of disorder consists in essential increase of ``bulk'' Tc0 which appears to exceed many times Tc0 for pure Mo. The x-ray data enable one to explain the origin of Tc0 enhancement in relatively thick layers. The depression of Tc with increasing sheet resistance was observed on Mo/Si multilayers in agreement with the theory of superconductivity in disordered 2D metals. It is found that Tc(R_) dependence for multilayers is quite close to one for single Mo films. {} 1996 The American Physical Society.
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Fogel’ et al. (1996) studied this question.
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