The effect of proton irradiation on the photovoltaic response of p-i-n InP solar cells that include an InP/InAsP multi-quantum well (MQW) layer in the intrinsic region is studied. Data from cells with three different quantum well structures are presented along with data from a control cell grown without MQW layer. The results show how the addition of the MQW's improves the solar energy conversion efficiency thereby allowing the base to be as thin a 1 μsm while still maintaining a good photocurrent. In addition, the radiation response of the MQW cells is shown to be equal to or better than the InP control cell. Published in 2000 by John Wiley & Sons, Ltd.
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Walters et al. (2000) studied this question.
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