Temperature dependence of electron concentration in intrinsic‐like HgTe

Measurement of the Hall effect and the conductivity are performed on HgTe sample characterized by an electron mobility of 106 cm2/Vs at 1.6 K. The range of temperatures investigated is 1.6 to 32 K and the external magnetic field covers the region 50 to 800 G. The interpretation of the data based on the conductivity tensor components analysis shows that the sample contains 5 × 1016 cm−3 acceptors. The acceptor ionization energy is estimated to be 2 meV. It is shown that a simple one‐carrier expression for the Hall constant may give wrong results for the electron concentration, differing by a factor of two from the correct value. From the behaviour of conduction electron concentration below 6 K it is found that the conduction–valence band overlap is smaller than 0.3 meV.