The dark-current conduction mechanism in CdS–Cu2S thin-film heterojunctions was investigated. The forward currents may be expressed by Jf = C exp (β U + γ T) and the reverse currents by Jr = – C U exp [–λ (Ud – U)−1/2]. These expressions are consistent with a multistep tunnelling mechanism involving energy levels in the forbidden energy gap of CdS.
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Martinuzzi et al. (1973) studied this question.
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