Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain withIn situDoping for Series Resistance Reduction

In this paper, we report N-channel metal–oxide–semiconductor field-effect transistors (N-MOSFETs) featuring in situ doped raised In 0.53 Ga 0.47 As source/drain (S/D) regions. This is the first demonstration of such regrowth on an In 0.7 Ga 0.3 As channel. After SiON spacer formation, the raised In 0.53 Ga 0.47 As S/D structure was formed by selective epitaxy of In 0.53 Ga 0.47 As in the S/D regions by metal-organic chemical-vapor deposition (MOCVD). In situ silane SiH 4 doping was also introduced to boost the N-type doping concentration in the S/D regions for series resistance R SD reduction. The raised S/D structure contributes to I Dsat enhancement for the In 0.7 Ga 0.3 As N-MOSFETs.