In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain

A self-aligned Ni–InGaAs metallic source and drain (S/D) technology for In 0.7 Ga 0.3 As channel n-MOSFETs (metal-oxide-semiconductor field-effect transistors) is reported. A process was developed for selective contact metallization on InGaAs, comprising a reaction of Ni with In x Ga 1 − x As to form a metallic Ni–InGaAs material, and a selective removal of excess Ni using a wet etch. Ni–InGaAs has low sheet resistance, is ohmic on n - In x Ga 1 − x As , and forms a Schottky contact on p - In x Ga 1 − x As . A self-aligned salicidelike integration scheme was used to realize In 0.7 Ga 0.3 As n-MOSFETs with self-aligned Ni–InGaAs metal S/D. n-MOSFETs with a gate length of 1 μ m shows good transfer characteristics with an on-state/off-state drain current ratio of ∼ 10 3 and peak transconductance G m of 74 μ S ∕ μ m .