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A differential method of measuring the Hall effect in the presence of a large constant magnetic field is described. This is used to measure the dependence of the Hall coefficient upon electric field in n‐type InSb at and below 4 °K under conditions where the magnetic freeze‐out is significant. These results show that in the samples studied changes in mobility made the major contribution to the sub‐mm extrinsic photoconductivity.
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Mitchell et al. (1966) studied this question.
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